Self-biased photoelectrochemical photodetector based on liquid phase exfoliated SnSe nanosheets

The present article involves a liquid phase exfoliation technique to synthesize SnSe nanosheets. These nanosheets are deposited on an ITO glass substrate to make a thin film via an electrophoretic deposition (EPD) technique. Through the use of energy-dispersive X-ray analysis (EDAX), the cleanliness and chemical compositions of the film are examined. The surface topography of the deposited film is carried out by scanning electron microscopy (SEM). The orthorhombic crystal structure of SnSe thin film is verified by X-ray diffraction (XRD) analysis. The optical gap energy and absorbance profiles also exhibit a morphology-dependent response, as measured by ultraviolet-visible (UV-vis) spectroscopy. The Photoresponse performance of SnSe thin film-based PEC-type photodetector was carried out under illumination of poly and monochromatic wavelengths. SnSe nanosheetbased photodetector showed a maximum photocurrent of 14.50 mu A under polychromatic light of intensity 100 mW/cm(2), at zero bias. This study demonstrates how the Requirement for TMC semiconductors in optoelectronic devices increases due to their exceptional photoresponse performance.