Gamma ray irradiation response of the trench MOSFET amplifier

被引：0
|
作者：
Tang, Jun [1 ,2 ]
Nong, Shuying [1 ,2 ]
Luo, Yuwen [3 ]
Zhang, Wei [4 ]
Yang, Tinggui [1 ,2 ]
机构：
[1] The 404 Company Limited, China National Nuclear Corperation, Jiayuguan,735100, China
[2] Gansu Key Laboratory of Nuclear Fuel Cycle Technology, Jiayuguan,735100, China
[3] China National Nuclear Wuhan Nuclear Power Operation Technology Co., Ltd., Wuhan,430223, China
[4] State Key Laboratory of Functional Materials and Devices for Special Environmental Conditions, Xinjiang Key Laboratory of Extreme Environment Electronics, Xinjiang Technical Institute of Physics and Chemistry, Chinese Academy of Sciences, Urumqi,830011, Ch
来源：
He Jishu/Nuclear Techniques | 2024年 / 47卷 / 11期
关键词：
Supported by Young Talents Project of China National Nuclear Corporation and Gansu Youth Science and Technology Fund (No.23JRRA1359);
D O I：
10.11889/j.0253-3219.2024.hjs.47.110403
中图分类号：
学科分类号：
摘要：
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