Impact of -OH surface defects on the electronic and structural properties of nickel oxide thin films

被引:0
|
作者
Fois, Ettore [1 ,2 ]
Maccato, Chiara [3 ,4 ,5 ,6 ]
Barreca, Davide [5 ,6 ]
Invernizzi, Cristiano [1 ,2 ]
Tabacchi, Gloria [1 ,2 ]
机构
[1] Insubria Univ, Dept Sci & High Technol, Via Valleggio 11, I-22100 Como, Italy
[2] INSTM, Via Valleggio 11, I-22100 Como, Italy
[3] Padova Univ, Dept Chem Sci, Via Marzolo 1, I-35131 Padua, Italy
[4] INSTM, Via Marzolo 1, I-35131 Padua, Italy
[5] Padova Univ, Dept Chem Sci, CNR ICMATE, Via Marzolo 1, I-35131 Padua, Italy
[6] Padova Univ, Dept Chem Sci, INSTM, Via Marzolo 1, I-35131 Padua, Italy
关键词
CHEMICAL-VAPOR-DEPOSITION; NIO; PRECURSORS; PSEUDOPOTENTIALS; COMPLEXES; CVD;
D O I
10.1039/d4dt03340j
中图分类号
O61 [无机化学];
学科分类号
070301 ; 081704 ;
摘要
Nickel oxide-based thin films and nanomaterials are a current focus of intense research efforts due to the broad range of end uses in a variety of applications. While the chemico-physical properties of bulk NiO crystals, characterized by a wide band gap (4.0-4.3 eV), antiferromagnetic ordering and p-type character, have been extensively studied, for NiO films/nanomaterials the microscopic-level relationships between the surface defect structure and electronic properties are far from being completely elucidated. In the present work, we show that, by using density functional theory with the Hubbard correction (DFT+U), -OH surface defects, almost ubiquitous on oxide surfaces, can directly influence the electronic structure of NiO(100) model slabs. Depending on the exact defect chemical structure and surface defect density, the energy gap of the -OH bearing NiO(100) system can be engineered, and its behaviour can be modulated from p-type to n-type. The insights provided herein may be of importance for the modulation of NiO nanosystem properties as a function of specific applications, an important issue for their eventual real-world utilization.
引用
收藏
页码:2765 / 2775
页数:12
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