A Silicon Tunnel Field-Effect Transistor with an In Situ Doped Single Crystalline Ge Source for Achieving Sub-60 mV/decade Subthreshold Swing

被引：0
|
作者：
刘艳
王洪娟
颜静
韩根
机构：
[1] KeyLaboratoryofOptoelectronicTechnologyandSystemsoftheEducationMinistryofChina,CollegeofOptoelectronicEngineering,ChongqingUniversity
来源：
Chinese Physics Letters | 2013年 / 30卷 / 08期
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中图分类号：
TN386 [场效应器件];
学科分类号：
摘要：
We report the demonstration of an n-channel lateral Si tunnel field-effect transistor（TFET） with a single crystalline Ge source fabricated using the gate-last process.The p+ Ge source was in situ doped and grown at 320°C.An abrupt interface between Ge source and Si channel with type-Ⅱ band alignment and a steep source doping profile（1.5n.rn/decade） formed the tunneling junction.This allows the realization of a TFET with a steep subthreshold swing of 49mV/'decade at room temperature and an ION/IOFF ratio of 10～7.
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页码：213 / 215
页数：3
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