Silicon-carbide/boron-containing coatings for the oxidation protection of graphite

被引:0
|
作者
Univ of Pennsylvania, Philadelphia, United States [1 ]
机构
来源
Carbon | / 4卷 / 537-543期
关键词
D O I
暂无
中图分类号
学科分类号
摘要
引用
下载
收藏
相关论文
共 50 条
  • [1] SILICON-CARBIDE/BORON-CONTAINING COATINGS FOR THE OXIDATION PROTECTION OF GRAPHITE
    FERGUS, JW
    WORRELL, WL
    CARBON, 1995, 33 (04) : 537 - 543
  • [2] CERAMIC OXIDE COATINGS FOR THE CORROSION PROTECTION OF SILICON-CARBIDE
    VANROODE, M
    PRICE, JR
    STALA, C
    JOURNAL OF ENGINEERING FOR GAS TURBINES AND POWER-TRANSACTIONS OF THE ASME, 1993, 115 (01): : 139 - 147
  • [3] DETERMINATION OF FREE GRAPHITE IN TEXTURED SAMPLES OF BORON-CARBIDE AND BORON-CARBIDE SILICON-CARBIDE COMPOSITES
    BOUGOIN, M
    FILLIT, R
    THEVENOT, F
    BRUYAS, H
    JOURNAL OF THE LESS-COMMON METALS, 1986, 117 (1-2): : 215 - 223
  • [4] OXIDATION OF SILICON-CARBIDE
    KEYS, LH
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1976, 123 (08) : C253 - C253
  • [5] DIFFUSION OF BORON IN SILICON-CARBIDE
    MOKHOV, EN
    VODAKOV, YA
    SEMENOV, VV
    KHOLUYAN.GF
    ODING, VG
    LOMAKINA, GA
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1972, 6 (03): : 414 - &
  • [6] OXIDATION OF POLYCRYSTALLINE SILICON-CARBIDE
    OGBUJI, LUJT
    CERAMICS INTERNATIONAL, 1986, 12 (03) : 173 - 178
  • [7] EFFECT OF CARBON AND BORON ON THE HIGH-TEMPERATURE OXIDATION OF SILICON-CARBIDE
    FERGUS, JW
    WORRELL, WL
    JOURNAL OF THE AMERICAN CERAMIC SOCIETY, 1995, 78 (07) : 1961 - 1964
  • [8] BORON-DOPED SILICON-CARBIDE
    VODAKOV, YA
    ZHUMAEV, N
    ZVEREV, BP
    LOMAKINA, GA
    MOKHOV, EN
    ODING, VG
    SEMENOV, VV
    SIMAKHIN, YF
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1977, 11 (02): : 214 - 217
  • [9] SPECTRAL DETERMINATION OF BORON IN SILICON-CARBIDE
    BOKOVA, VI
    AMOSOVA, LV
    INDUSTRIAL LABORATORY, 1977, 43 (12): : 1680 - 1680
  • [10] CHARACTERISTICS OF THE DIFFUSION OF BORON IN SILICON-CARBIDE
    VODAKOV, YA
    LOMAKINA, GA
    MOKHOV, EN
    ODING, VG
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1980, 14 (02): : 222 - 223