ANALYSIS OF SEMICONDUCTOR SURFACES BY SPARK SOURCE MASS SPECTROMETRY.

This paper describes the experimental technique which has been developed for the analysis of impurities on the surface of semiconductor slices about 2 cm in diameter. The process of spark erosion of the sample is discussed and surface profiles are presented which illustrate the topography of the eroded surface. The method for identifying surface and bulk impurities is described and it is shown that surface contaminants may be determined with a sensitivity extending down to approximately equals 3. 10**1**1 at. cm** minus **2 (one thousandth of a monolayer). Analytical results obtained from the analysis of various semiconductor surfaces and layers are presented and discussed.