Anomalous etching residues of sputter-deposited Ta upon reactive ion etching using chlorine-based plasmas

被引:0
|
作者
Nakaishi, Masafumi [1 ]
Yamada, Masao [1 ]
Kondo, Kazuaki [1 ]
Yamabe, Masaki [1 ]
Sugishima, Kenji [1 ]
机构
[1] Fujitsu Ltd, Kawasaki, Japan
来源
关键词
Tantalum;
D O I
暂无
中图分类号
学科分类号
摘要
引用
收藏
相关论文
共 50 条
  • [42] Suppression of aluminum contamination in polysilicon reactive ion etching using highly purified chlorine gas
    Sato, M
    Arita, Y
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1997, 144 (07) : 2541 - 2547
  • [43] ON THE COMPARISON OF REACTIVE-ION ETCHING MECHANISMS FOR SiO2 IN FLUORINE- AND CHLORINE-CONTAINING PLASMAS
    Efremov, A. M.
    Smirnov, S. A.
    Betelin, V. B.
    Kwon, K. -H.
    IZVESTIYA VYSSHIKH UCHEBNYKH ZAVEDENII KHIMIYA I KHIMICHESKAYA TEKHNOLOGIYA, 2023, 66 (08): : 54 - 62
  • [44] Feature profile evolution during shallow trench isolation etching in chlorine-based plasmas. III. The effect of oxygen addition
    Hsu, Cheng-che
    Marchack, Nathan
    Martin, Ryan M.
    Pham, Calvin
    Hoang, John
    Chang, Jane P.
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2013, 31 (04):
  • [45] Optical study of InP etched in methane-based plasmas by reactive ion beam etching
    CSIC, Madrid, Spain
    Semicond Sci Technol, 2 (238-242):
  • [46] Optical study of InP etched in methane-based plasmas by reactive ion beam etching
    Sendra, JR
    Armelles, G
    Anguita, J
    SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1996, 11 (02) : 238 - 242
  • [47] REACTIVE ION ETCHING OF SPUTTER DEPOSITED TANTALUM WITH CF4, CF3CL, AND CHF3
    KUO, Y
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1993, 32 (1A): : 179 - 185
  • [48] Reactive ion etching of sputter deposited tantalum with CF4, CF3Cl, and CHF3
    Kuo, Yue
    Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, 1993, 32 (1 A): : 179 - 185
  • [49] Low-temperature dry etching of GaAs and AlGaAs using 92-MHz anode-coupled chlorine reactive ion etching
    Saitoh, T
    Sogawa, T
    Kanbe, H
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1997, 36 (12B): : 7650 - 7654
  • [50] Deep fused silica wet etching using an Au-free and stress-reduced sputter-deposited Cr hard mask
    Steingoetter, I
    Fouckhardt, H
    JOURNAL OF MICROMECHANICS AND MICROENGINEERING, 2005, 15 (11) : 2130 - 2135