Crack formation in GaAs heteroepitaxial films on Si and SiGe virtual substrates

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机构：
[1] Yang, V.K.
[2] Groenert, M.
[3] Leitz, C.W.
[4] Pitera, A.J.
[5] Currie, M.T.
[6] Fitzgerald, E.A.
来源：
Yang, V.K. | 1600年 / American Institute of Physics Inc.卷 / 93期
关键词：
Crack initiation - Epitaxial growth - Finite element method - Mathematical models - Nucleation - Silicon - Substrates - Thermal stress - Thin films;
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摘要：
A study was performed on crack formation in GaAs heteroepitaxial films on Si and SiGe virtual substrates. The mathematical models for the critical epitaxial film thickness for the onset of crack formation in GaAs films on either Si or SiGe substrates were presented. The finite element models predicted a crack spacing of 15 μm for GaAs films on SiGe substrates and 35 μm for GaAs films on Si substrates.
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