ANNEALING BEHAVIOUR OF STRESS IN Sb-IMPLANTED Si.

被引:0
|
作者
Itoh, Nobuo
Nakau, Tanehiro
Morikawa, Yasumitsu
Nagami, Kouichi
机构
来源
| 1978年 / 17卷 / 06期
关键词
D O I
暂无
中图分类号
学科分类号
摘要
引用
收藏
页码:1003 / 1008
相关论文
共 50 条
  • [1] ANNEALING BEHAVIOR OF STRESS IN SB-IMPLANTED SI
    ITOH, N
    NAKAU, T
    MORIKAWA, Y
    NAGAMI, K
    JAPANESE JOURNAL OF APPLIED PHYSICS, 1978, 17 (06) : 1003 - 1008
  • [2] RAPID THERMAL ANNEALING OF SHALLOW SB-IMPLANTED SI
    RIDGWAY, MC
    WHITTON, JL
    SCANLON, PJ
    NAEM, AA
    JOURNAL OF APPLIED PHYSICS, 1988, 64 (07) : 3456 - 3460
  • [3] ANOMALOUS REDISTRIBUTIONS OF AS AND SB ATOMS IN AS-IMPLANTED SB-DOPED SI AND SB-IMPLANTED AS-DOPED SI DURING ANNEALING
    YOKOTA, K
    FURUTA, H
    ISHIHARA, S
    KIMURA, I
    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1991, 55 (1-4): : 633 - 636
  • [4] TEM STUDY OF RAPID THERMAL ANNEALED SB-IMPLANTED SI
    FULCHER, MR
    KWOR, R
    RICKER, RE
    HO, CC
    GELPEY, JC
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1986, 133 (08) : C329 - C330
  • [5] Energy dependence of radiation damage in Sb-implanted Si(100)
    Lai, YS
    Chen, JS
    Ho, YS
    Sun, HL
    Tsai, CJ
    Chen, TC
    Ko, YF
    Lee, FS
    You, WM
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 2005, 152 (07) : G511 - G516
  • [6] ANNEALING OF HIGH DOSE Sb-IMPLANTED SINGLE-CRYSTAL SILICON.
    Guerrero, E.
    Poetzl, H.
    Stingeder, G.
    Grasserbauer, M.
    Piplitz, K.
    Chu, W.K.
    1985, (132)
  • [7] DIFFUSION PHENOMENA IN SB-IMPLANTED SILICON
    ANTONCIK, E
    RADIATION EFFECTS AND DEFECTS IN SOLIDS, 1993, 125 (04): : 355 - 363
  • [8] ANNEALING OF HIGH-DOSE SB-IMPLANTED SINGLE-CRYSTAL SILICON
    GUERRERO, E
    POTZL, H
    STINGEDER, G
    GRASSERBAUER, M
    PIPLITZ, K
    CHU, WK
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1985, 132 (12) : 3048 - 3052
  • [9] DEFECTS AND DIFFUSION IN SB-IMPLANTED SILICON
    PONGRATZ, P
    KUHNERT, W
    GUERRERO, E
    STINGEDER, G
    INSTITUTE OF PHYSICS CONFERENCE SERIES, 1987, (87): : 497 - 502
  • [10] ANNEALING OF SB+-ION-IMPLANTED SI
    HOLLAND, OW
    FATHY, D
    JOURNAL OF APPLIED PHYSICS, 1988, 63 (11) : 5326 - 5330