INDIUM PHOSPHIDE OXIDE ON InP FOR MOSFET APPLICATIONS.

被引：9
|
作者：
Al-Refaie, S.N.
Carroll, J.E.
机构：
来源：
IEE Proceedings I: Solid State and Electron Devices | 1981年 / 128卷 / 06期
关键词：
MOSFET;
D O I：
10.1049/ip-i-1.1981.0051
中图分类号：
学科分类号：
摘要：
Oxide films have been deposited on InP by sputtering InP in an oxygen dc-excited plasma. The rate of sputtering was enhanced by applying a magnetic field. Preliminary microprobe and Auger analysis of the films has indicated equal proportions of indium and phosphorus with a good incorporation of oxygen and a moderately uniform composition. Measurements on MOS devices have shown a film resistivity of approximately equals 3 multiplied by 10**1**2 OMEGA cm. The oxide film has been used in fabricating n-channel inversion-type MOSFETs.
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页码：207 / 210
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