Single to polycrystalline transition in silicon growth by ion-assisted deposition at low temperatures

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[1] Nerding, M.
[2] Oberbeck, L.
[3] Wagner, T.A.
[4] Bergmann, R.B.
[5] Strunk, H.P.
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Nerding, M. (nerding@ww.uni-erlangen.de) | 1600年 / American Institute of Physics Inc.卷 / 93期
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