Metal contamination of silicon wafers induced by reactive ion etching plasmas and its behavior upon subsequent cleaning procedures

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Verdonck, Patrick

Hasenack, Claus Martin

Mansano, Ronaldo Domingues

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Journal of Vacuum Science & Technology B: Microelectronics Processing and Phenomena | 1996年 / 14卷 / 01期

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[1] Metal contamination of silicon wafers induced by reactive ion etching plasmas and its behavior upon subsequent cleaning procedures
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JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1996, 14 (01): : 538 - 542
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[4] NUCLEAR STUDY OF FLUORINE CONTAMINATION OF TANTALUM INDUCED BY VARIOUS CHEMICAL POLISHING PROCEDURES AND OF ITS SUBSEQUENT BEHAVIOR DURING ANODIC OXIDATION
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[5] DEEP LEVEL TRANSIENT SPECTROSCOPY OF DEFECTS INDUCED BY THE COMBINATION OF CF4 REACTIVE ION ETCHING AND OXIDATION IN METAL-OXIDE-SILICON CAPACITORS
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