Differences in physical properties of hydrogenated and fluorinated amorphous silicon carbide prepared by reactive sputtering

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| 1600年 / 71期

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[1] DIFFERENCES IN PHYSICAL-PROPERTIES OF HYDROGENATED AND FLUORINATED AMORPHOUS-SILICON CARBIDE PREPARED BY REACTIVE SPUTTERING
DEMICHELIS, F
PIRRI, CF
TRESSO, E
STAPINSKI, T
JOURNAL OF APPLIED PHYSICS, 1992, 71 (11) : 5641 - 5645
[2] Comparison between fluorinated and hydrogenated amorphous silicon carbide prepared by reactive sputtering
Demichelis, F.
Pirri, C.F.
Tresso, E.
Stapinski, T.
Boarino, L.
Rava, P.
Proceedings of the International Conference on Photovoltaic Solar Energy, 1991,
[3] PHYSICAL-PROPERTIES OF AMORPHOUS HYDROGENATED SILICON FILMS PREPARED BY MAGNETRON SPUTTERING
SVANBAEV, EA
ZHDANOVICH, NS
ZHERZDEV, AV
TAURBAEV, TM
TERUKOV, EI
INORGANIC MATERIALS, 1987, 23 (05) : 635 - 639
[4] AMORPHOUS HYDROGENATED SILICON-CARBIDE PRODUCED BY MAGNETRON REACTIVE SPUTTERING
ROGACHEV, NA
KUZNETSOV, AN
TRAPEZNIKOVA, IN
TERUKOV, EI
CHELNOKOV, VE
SEMICONDUCTORS, 1994, 28 (08) : 776 - 778
[5] PROPERTIES OF HYDROGENATED AND FLUORINATED AMORPHOUS-SILICON CARBON ALLOY-FILMS PREPARED BY MAGNETRON SPUTTERING
SAITO, N
PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES, 1987, 55 (05): : 615 - 625
[6] PROPERTIES OF HYDROGENATED AND FLUORINATED AMORPHOUS SILICON-CARBON ALLOY FILMS PREPARED BY MAGNETRON SPUTTERING.
Saito, N.
Philosophical Magazine B: Physics of Condensed Matter; Electronic, Optical and Magnetic Properties, 1987, 55 (05): : 615 - 625
[7] ELECTRON TRANSPORT IN OXYGENATED AMORPHOUS HYDROGENATED SILICON PREPARED BY REACTIVE SPUTTERING.
Jiranapakul, Koarakot
Shirafuji, Junji
Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes, 1987, 26 (04): : 517 - 523
[8] ELECTRON-TRANSPORT IN OXYGENATED AMORPHOUS HYDROGENATED SILICON PREPARED BY REACTIVE SPUTTERING
JIRANAPAKUL, K
SHIRAFUJI, J
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1987, 26 (04): : 517 - 523
[9] HYDROGEN CONTENT OF AMORPHOUS SILICON-CARBIDE PREPARED BY REACTIVE SPUTTERING - EFFECTS ON FILMS PROPERTIES
GUIVARCH, A
RICHARD, J
LECONTELLEC, M
LIGEON, E
FONTENILLE, J
JOURNAL OF APPLIED PHYSICS, 1980, 51 (04) : 2167 - 2174
[10] ELECTRICAL AND OPTICAL-PROPERTIES OF AMORPHOUS HYDROGENATED SILICON PREPARED BY REACTIVE ION-BEAM SPUTTERING
SINGH, J
BUDHANI, RC
CHOPRA, KL
JOURNAL OF APPLIED PHYSICS, 1984, 56 (04) : 1097 - 1103

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