Nucleation Control by Intermittent Supply of Dichlorosilane towards the Fabrication of Polycrystalline Silicon Thin Films with Large Grain Size

被引：0

作者：

Ishikawa, Yasuaki ^{[1
]}

Uraoka, Yukiharu ^{[1
]}

Fuyuki, Takashi ^{[1
]}

机构：

[1] Graduate School of Materials Science, Nara Inst. of Science and Technology, Takayama 8916-5, Ikoma, Nara 630-0192, Japan

来源：

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers | 2003年 / 42卷 / 11期

关键词：

Chemical bonds - Chemical vapor deposition - Crystallization - Decomposition - Etching - Grain size and shape - Nucleation - Polycrystalline materials - Scanning electron microscopy - Silicon - Solar cells - Thermal expansion;

D O I：

10.1143/jjap.42.6759

中图分类号：

学科分类号：

摘要：

To obtain polycrystalline Si (poly-Si) thin films with large grain size, we propose a nucleation control method by intermittent supply of Si source gas in atmospheric pressure chemical vapor deposition. By intermittent supply of dichlorosilane as Si source gas, the nucleus density was controlled to between 105 and 107 cm-2. The maximum grain size of 22 μm with a film thickness of 15 μm was obtained. By optimizing the conditions of intermittent ratio and time, a relatively high preferential orientation of (220) over 65% was achieved. In addition, the poly-Si thin film with continuous columnar structure was obtained.

引用

页码：6759 / 6765

共 50 条

[1] Nucleation control by intermittent supply of dichlorosilane towards the fabrication of polycrystalline silicon thin films with large grain size
Ishikawa, Y
Uraoka, Y
Fuyuki, T
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 2003, 42 (11): : 6759 - 6765
[2] Nucleation control towards the poly-Si thin films with large grain size utilizing intermittent supply of dichlorosilane
Ishikawa, Y
Uraoka, Y
Fuyuki, T
PROCEEDINGS OF 3RD WORLD CONFERENCE ON PHOTOVOLTAIC ENERGY CONVERSION, VOLS A-C, 2003, : 1503 - 1506
[3] Large grain polycrystalline Si thin films by nucleation-controlled chemical vapor deposition using intermittent source gas supply
Yamazaki, T
Uraoka, Y
Fuyuki, T
THIN SOLID FILMS, 2005, 487 (1-2) : 26 - 30
[4] Fabrication of large grain polycrystalline silicon films on different substrates
Ma, Lei
Zhang, Lei
Wang, Xia
Peng, Ying-Cai
Rengong Jingti Xuebao/Journal of Synthetic Crystals, 2008, 37 (06): : 1505 - 1509
[5] Preparation of polycrystalline silicon of 100 μm size large grain thin films by metal induced crystallization
Tang, Zheng-Xia
Shen, Hong-Lie
Xie, Yao
Lu, Lin-Feng
Jiang, Feng
Shen, Jian-Chang
Gongneng Cailiao/Journal of Functional Materials, 2010, 41 (03): : 453 - 456
[6] Sub-6-nm grain size control in polycrystalline thin films using synthetic nucleation layer
Piramanayagam, S. N.
Srinivasan, K.
APPLIED PHYSICS LETTERS, 2007, 91 (14)
[7] GROWTH OF POLYCRYSTALLINE SILICON FILMS - GRAIN-SIZE
EMMANUEL, A
POLLOCK, HM
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1973, 120 (11) : 1586 - 1591
[8] Deposition of polycrystalline thin films with controlled grain size
Vopsaroiu, M
Fernandez, GV
Thwaites, MJ
Anguita, J
Grundy, PJ
O'Grady, K
JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2005, 38 (03) : 490 - 496
[9] Large grain size dependence of resistance of polycrystalline films
Arun, P
Tyagi, P
Vedeshwar, AG
PHYSICA B-CONDENSED MATTER, 2002, 322 (3-4) : 289 - 296
[10] Fabrication of large-grain polycrystalline silicon for solar cells
Kuo, C. -C.
LASER PHYSICS, 2009, 19 (01) : 143 - 147

← 1 2 3 4 5 →