Thickness dependent and annealing effects of underdoped lanthanum manganite thin films grown on Si substrates

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作者：
机构：
[1] Murugavel, P.
[2] Noh, T.W.
[3] Yoon, Jong-Gul
来源：
Murugavel, P. | 1600年 / American Institute of Physics Inc.卷 / 95期
关键词：
Annealing - Electric resistance - Grain boundaries - Lanthanum compounds - Metal insulator transition - Polycrystalline materials - Pulsed laser deposition - Transport properties - X ray powder diffraction;
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摘要：
The thickness dependent transport properties of polycrystalline underdoped manganite films deposited on Si substrate were investigated. Powder x-ray diffraction analysis of the targets showed single-phase patterns without any impurity peaks. The TMI of polycrystalline films was found to become higher with postannealing in oxygen. The results show that the enhancement of TMI by varying the thickness and postannealing temperature, can be useful in the development of materials for device applications.
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