ENHANCED CONDUCTION AND MINIMIZED CHARGE TRAPPING IN ELECTRICALLY ALTERABLE READ-ONLY MEMORIES USING OFF-STOICHIOMETRIC SILICON DIOXIDE FILMS.

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作者：
DiMaria, D.J.
Dong, D.W.
Pesavento, F.L.
Lam, C.
Brorson, S.D.
机构：
[1] IBM Thomas J. Watson Research Center, Yorktown Heights, NY 10598, United States
[2] IBM GTD Burlington, Essex Junction, VT 05452, United States
[3] Massachusetts Institute of Technology, Cambridge, MA 02139, United States
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| 1600年 / 55期
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