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- [2] MOVPE growth of InPSb/InAs heterostructures for mid-infrared emitters Journal of Electronic Materials, 1997, 26 : 1221 - 1224
- [3] Room temperature InPSb/InAs and InPSb/InAs/InAsSb mid-infrared emitting diodes grown by MOVPE IEE PROCEEDINGS-OPTOELECTRONICS, 1998, 145 (05): : 257 - 260
- [4] The growth of InAsSb/InAs/InPSb/InAs mid-infrared emitters by metal-organic chemical vapor deposition INFRARED APPLICATIONS OF SEMICONDUCTORS III, 2000, 607 : 303 - 308
- [5] Characterization of MOVPE grown InPSb/InAs heterostructures Applied Surface Science, 1998, 123-124 : 746 - 750
- [7] MOVPE Growth of Lattice Matched InAs/GaAsSb Superlattice on InAs Substrate for Mid-Infrared Sensing Devices 2017 22ND MICROOPTICS CONFERENCE (MOC), 2017, : 300 - 301
- [8] Growth and PL Measurement of Metamorphic InAs and InAs/GaSb Superlattice using MOVPE for Mid-Infrared Photonic Devices 2019 24TH OPTOELECTRONICS AND COMMUNICATIONS CONFERENCE (OECC) AND 2019 INTERNATIONAL CONFERENCE ON PHOTONICS IN SWITCHING AND COMPUTING (PSC), 2019,
- [9] INAS QUANTUM DOT STRUCTURES ON INP GROWN BY MOVPE FOR MID-INFRARED EMISSION 2008 IEEE 20TH INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE AND RELATED MATERIALS (IPRM), 2008, : 1 - +
- [10] Population inversion and multiple subband transitions in InAs/InAs1-xSbx mid-infrared emitters PROCEEDINGS OF THE 25TH INTERNATIONAL CONFERENCE ON THE PHYSICS OF SEMICONDUCTORS, PTS I AND II, 2001, 87 : 1787 - 1788