20 Gbit/s regenerative receiver IC using InP/InGaAs double-heterostructure bipolar transistors

被引：0
|
作者：
NTT System Electronics Lab, Atsugi, Japan [1 ]
机构：
来源：
Electron Lett | / 2卷 / 159-160期
关键词：
D O I：
暂无
中图分类号：
学科分类号：
摘要：
6
引用
收藏
相关论文
共 50 条
  • [1] 20Gbit/s regenerative receiver IC using InP/InGaAs double-heterostructure bipolar transistors
    Sano, E
    Kurishima, K
    Yamahata, S
    [J]. ELECTRONICS LETTERS, 1997, 33 (02) : 159 - 160
  • [2] HIGH-SPEED InGaAs(P)/InP DOUBLE-HETEROSTRUCTURE BIPOLAR TRANSISTORS.
    Nottenburg, Richard N.
    Bischoff, J.-C.
    Panish, Morton B.
    Temkin, H.
    [J]. Electron device letters, 1987, EDL-8 (06): : 282 - 284
  • [3] Ultrahigh-speed InP/InGaAs double-heterostructure bipolar transistors and analyses of their operation
    Matsuoka, Yutaka
    Yamahata, Shoji
    Kurishima, Kenji
    Ito, Hiroshi
    [J]. Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes & Review Papers, 1996, 35 (11): : 5646 - 5654
  • [4] Ultrahigh-speed InP/InGaAs double-heterostructure bipolar transistors and analyses of their operation
    Matsuoka, Y
    Yamahata, S
    Kurishima, K
    Ito, H
    [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 1996, 35 (11): : 5646 - 5654
  • [5] HIGH-SPEED INGAAS(P) INP DOUBLE-HETEROSTRUCTURE BIPOLAR-TRANSISTORS
    NOTTENBURG, RN
    BISCHOFF, JC
    PANISH, MB
    TEMKIN, H
    [J]. IEEE ELECTRON DEVICE LETTERS, 1987, 8 (06) : 282 - 284
  • [6] INGAAS/INP DOUBLE-HETEROSTRUCTURE BIPOLAR-TRANSISTORS WITH NEAR-IDEAL BETA-VERSUS IC CHARACTERISTIC
    NOTTENBURG, RN
    TEMKIN, H
    PANISH, MB
    BHAT, R
    BISCHOFF, JC
    [J]. IEEE ELECTRON DEVICE LETTERS, 1986, 7 (11) : 643 - 645
  • [7] BREAKDOWN SPEED CONSIDERATIONS IN INP/INGAAS SINGLE-HETEROSTRUCTURE AND DOUBLE-HETEROSTRUCTURE BIPOLAR-TRANSISTORS
    CHAU, HF
    PAVLIDIS, D
    HU, J
    TOMIZAWA, K
    [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1993, 40 (01) : 2 - 8
  • [8] INP/INGAAS DOUBLE-HETEROSTRUCTURE BIPOLAR-TRANSISTORS FOR HIGH-SPEED ICS AND OEICS
    MATSUOKA, Y
    SANO, E
    [J]. SOLID-STATE ELECTRONICS, 1995, 38 (09) : 1703 - 1709
  • [9] Current blocking in InP/InGaAs double heterostructure bipolar transistors
    McKinnon, WR
    McAlister, SP
    Abid, Z
    Guzzo, EE
    [J]. JOURNAL OF APPLIED PHYSICS, 1996, 79 (05) : 2771 - 2778
  • [10] DOUBLE-HETEROSTRUCTURE INGAAS/INP PIN PHOTODETECTORS
    DIADIUK, V
    GROVES, SH
    [J]. SOLID-STATE ELECTRONICS, 1986, 29 (02) : 229 - 233
12345