Nondestructive determination of free-electron concentration and mobility in Hg1-xCdxTe, n-type InSb, and n-type GaAs

被引：0
|
作者：
机构：
来源：
| 1600年 / American Inst of Physics, Woodbury, NY, USA卷 / 75期
关键词：
D O I：
暂无
中图分类号：
学科分类号：
摘要：
引用
收藏
相关论文
共 50 条
  • [1] NONDESTRUCTIVE DETERMINATION OF FREE-ELECTRON CONCENTRATION AND MOBILITY IN HG(1-X)CD(X)TE, N-TYPE INSB, AND N-TYPE GAAS
    CLARKE, FW
    JOURNAL OF APPLIED PHYSICS, 1994, 75 (09) : 4319 - 4326
  • [2] ELECTRON-MOBILITY IN N-TYPE HG1-XCDXTE AND HG1-XZNXTE ALLOYS
    PATTERSON, JD
    GOBBA, WA
    LEHOCZKY, SL
    JOURNAL OF MATERIALS RESEARCH, 1992, 7 (08) : 2211 - 2218
  • [3] 2-ELECTRON CONDUCTION IN N-TYPE HG1-XCDXTE
    FINKMAN, E
    NEMIROVSKY, Y
    JOURNAL OF APPLIED PHYSICS, 1982, 53 (02) : 1052 - 1058
  • [4] A COMPARISON BETWEEN ELECTRON-MOBILITY IN N-TYPE HG1-XCDXTE AND HG1-XZNXTE
    ABDELHAKIEM, W
    PATTERSON, JD
    LEHOCZKY, SL
    MATERIALS LETTERS, 1991, 11 (1-2) : 47 - 51
  • [5] Characterization of recombination centres in n-type Hg1-xCdxTe
    Zhou, J
    Feng, SL
    Lu, LW
    Si, CC
    Li, YG
    Hu, XN
    SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1996, 11 (12) : 1878 - 1881
  • [6] PROPERTIES OF SCHOTTKY DIODES ON N-TYPE HG1-XCDXTE
    LEECH, PW
    KIBEL, MH
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1991, 9 (03): : 1770 - 1776
  • [7] Characterization of recombination centres in n-type Hg1-xCdxTe
    Chinese Acad of Science, Beijing, China
    Semicond Sci Technol, 12 (1878-1881):
  • [8] Mobility of Two-Electron Conduction in Narrow-Gap n-type Hg1-xCdxTe Structures
    Jozwikowska, A.
    Jozwikowski, K.
    Antoszewski, J.
    Faraone, L.
    Suligowski, M.
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 2018, 65 (11) : 4995 - 5001
  • [9] FAR INFRARED RECOMBINATION RADIATION FROM N-TYPE HG1-XCDXTE
    NIMTZ, G
    TYSSEN, E
    PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1976, 38 (02): : K171 - K173
  • [10] THE MODIFIED SHEET RESISTANCE OF INDIUM CONTACTS TO N-TYPE HG1-XCDXTE
    LEECH, PW
    REEVES, GK
    SOLID-STATE ELECTRONICS, 1995, 38 (04) : 781 - 785
12345