Double graded-gap hydrogenated amorphous silicon carbide thin-film light-emitting diode with composition-graded N layer and carbon-increasing P layer

被引：0
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作者：
Chen, Yen-Ann [1 ]
Chen, Jyh-Kuan [1 ]
Tsay, Wen-Chin [1 ]
Laih, Li-Hong [1 ]
Hong, Jyh-Wong [1 ]
Chang, Chun-Yen [1 ]
机构：
[1] Natl Central Univ, Chungli, Taiwan
来源：
Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes & Review Papers | 1996年 / 35卷 / 2 B期
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页码：1018 / 1021
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