Fabrication and characterization of metal-ferroelectrics-semiconductor field effect transistors using epitaxial BaMgF4 films grown on Si(111) substrates

被引：0

作者：

Aizawa, Koji ^{[1
]}

Okamoto, Tomoyuki ^{[1
]}

Tokumitsu, Eisuke ^{[1
]}

Ishihwara, Hiroshi ^{[1
]}

机构：

[1] Tokyo Inst of Technology, Yokohama, Japan

来源：

| / Gordon & Breach Science Publ Inc, Newark, NJ, United States卷 / 15期

关键词：

Barium compounds - Current voltage characteristics - Ferroelectric devices - Ferroelectric materials - Film growth - MESFET devices - Molecular beam epitaxy - Photolithography - Semiconductor device manufacture - Silicon wafers - Substrates;

D O I：

暂无

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学科分类号：

摘要：

Metal-ferroelectrics-semiconductor field effect transistors (MFS FETs) were fabricated using ferroelectric BaMgF4 (BMF) films epitaxially grown on Si(111) substrates and their electrical characteristics were investigated. BMF films were grown on Si(111) substrates by using MBE method, and n-channel MFS FETs were fabricated on p-type Si(111) substrates by the conventional photolithographic technique. Id-Vd and Id-Vg characteristics of an fabricated MFS FET were measured, and the threshold voltage shift was observed by applying a gate voltage. It was also demonstrated that the drain current could be gradually changed by applying positive short pulses to the gate of an MFS FET.

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[1] Fabrication and characterization of metal-ferroelectrics-semiconductor field effect transistor using epitaxial BaMgF4 films grown on Si(111) substrates
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不详
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