Effect of various interlayers on epiwafer bowing in AlGaN/GaN high-electron-mobility transistor structures

被引：0
|
作者：
机构：
[1] [1,Sakai, Masahiro
[2] Egawa, Takashi
[3] Hao, Maosheng
[4] Ishikawa, Hiroyasu
来源：
Sakai, M. (m-sakai@ngk.co.jp) | 1600年 / Japan Society of Applied Physics卷 / 43期
关键词：
D O I：
暂无
中图分类号：
学科分类号：
摘要：
引用
收藏
相关论文
共 50 条
  • [1] Effect of various interlayers on epiwafer bowing in AlGaN/GaN high-electron-mobility transistor structures
    Sakai, M
    Egawa, T
    Hao, MS
    Ishikawa, H
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 2004, 43 (12): : 8019 - 8023
  • [2] Effect of gate length on breakdown voltage in AlGaN/GaN high-electron-mobility transistor
    Luo, Jun
    Zhao, Sheng-Lei
    Mi, Min-Han
    Chen, Wei-Wei
    Hou, Bin
    Zhang, Jin-Cheng
    Ma, Xiao-Hua
    Hao, Yue
    CHINESE PHYSICS B, 2016, 25 (02)
  • [3] Effect of gate length on breakdown voltage in AlGaN/GaN high-electron-mobility transistor
    罗俊
    赵胜雷
    宓珉瀚
    陈伟伟
    侯斌
    张进成
    马晓华
    郝跃
    Chinese Physics B, 2016, 25 (02) : 425 - 429
  • [4] Improved AlGaN/GaN high electron mobility transistor using AlN interlayers
    Jiménez, A
    Bougrioua, Z
    Tirado, JM
    Braña, AF
    Calleja, E
    Muñoz, E
    Moerman, I
    APPLIED PHYSICS LETTERS, 2003, 82 (26) : 4827 - 4829
  • [5] Effect of Moisture on the Frequency-Dependent Current of an AlGaN/GaN High-Electron-Mobility Transistor
    Kim, Jeong Jin
    Yang, Gye Mo
    Shim, Kyu-Hwan
    Yang, Jeon Wook
    JAPANESE JOURNAL OF APPLIED PHYSICS, 2011, 50 (09)
  • [6] Gate controllability of HfSiOx/AlGaN/GaN MOS high-electron-mobility transistor
    Ochi, Ryota
    Maeda, Erika
    Nabatame, Toshihide
    Shiozaki, Koji
    Sato, Taketomo
    Hashizume, Tamotsu
    AIP ADVANCES, 2020, 10 (06)
  • [7] Effect of buffer structures on AlGaN/GaN high electron mobility transistor reliability
    Liu, Lu
    Lo, Chien-Fong
    Xi, Yuyin
    Ren, Fan
    Pearton, Stephen J.
    Laboutin, Oleg
    Cao, Yu
    Johnson, J. Wayne
    Kravchenko, Ivan I.
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2013, 31 (01):
  • [8] Influence of the Al content of the AlGaN buffer layer in AlGaN/GaN high-electron-mobility transistor structures on a Si substrate
    Yamaoka, Yuya
    Kakamu, Ken
    Ubukata, Akinori
    Yano, Yoshiki
    Tabuchi, Toshiya
    Matsumoto, Koh
    Egawa, Takashi
    PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 2017, 214 (03):
  • [9] Analysis of Operational Characteristics of AlGaN/GaN High-Electron-Mobility Transistor with Various Slant-Gate-Based Structures: A Simulation Study
    Lee, Jun-Ho
    Choi, Jun-Hyeok
    Kang, Woo-Seok
    Kim, Dohyung
    Min, Byoung-Gue
    Kang, Dong Min
    Choi, Jung Han
    Kim, Hyun-Seok
    MICROMACHINES, 2022, 13 (11)
  • [10] AlGaN/GaN high-electron-mobility transistor pH sensor with extended gate platform
    Pyo, Ju-Young
    Jeon, Jin-Hyeok
    Koh, Yumin
    Cho, Chu-young
    Park, Hyeong-Ho
    Park, Kyung-Ho
    Lee, Sang Woon
    Cho, Won-Ju
    AIP ADVANCES, 2018, 8 (08):
12345