Low temperature relaxation in amorphous silicon made by ion implantation

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Universite de Montreal, Montreal, Canada [1 ]
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Nucl Instrum Methods Phys Res Sect B | / 1-4卷 / 366-369期
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Number:; -; Acronym:; FCAR; Sponsor: Fonds pour la Formation de Chercheurs et l'Aide à la Recherche; Sponsor: Foundation for Community Association Research; NSERC; Sponsor: Natural Sciences and Engineering Research Council of Canada;
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