Characteristics of a micromachined floating-gate high-electron-mobility transistor at 4.2 K

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作者：
Teh, W.H. [1 ,2 ]
Crook, R. [1 ]
Smith, C.G. [1 ]
Beere, H.E. [1 ]
Ritchie, D.A. [1 ]
机构：
[1] Cavendish Laboratory, University of Cambridge, Madingley Road, Cambridge CB3 0HE, United Kingdom
[2] M/S# RA2-285, Logic Technology Development, Intel Corporation, 5200, NE Elam Young Parkway, Hillsboro, OR 97124, United States
来源：
Journal of Applied Physics | 2005年 / 97卷 / 11期
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