Simple interpretation of enhancement of hole drift mobility in amorphous arsenic triselenide induced by iodine doping

被引：0

|

作者：

Univ of Osaka Prefecture, Osaka, Japan ^{[1
]}

机构：

来源：

Solid State Commun | / 9卷 / 697-700期

关键词：

D O I：

暂无

中图分类号：

学科分类号：

摘要：

21

引用

收藏

相关论文

共 50 条

[1] A SIMPLE INTERPRETATION OF ENHANCEMENT OF HOLE DRIFT MOBILITY IN AMORPHOUS ARSENIC TRISELENIDE INDUCED BY IODINE DOPING
NAITO, H
IWAI, T
AMII, H
OKUDA, M
MATSUSHITA, T
SOLID STATE COMMUNICATIONS, 1995, 96 (09) : 697 - 700
[2] ENHANCEMENT OF HOLE DRIFT VELOCITY IN AMORPHOUS AS2SE3 BY IODINE DOPING
PFISTER, G
MELNYK, AR
SCHARFE, ME
SOLID STATE COMMUNICATIONS, 1977, 21 (09) : 907 - 910
[3] DRIFT MOBILITY STUDIES IN VITREOUS ARSENIC TRISELENIDE
MARSHALL, JM
OWEN, AE
PHILOSOPHICAL MAGAZINE, 1971, 24 (192): : 1281 - &
[4] Determination of free carrier recombination lifetime in amorphous semiconductors: application to the study of iodine doping effect in arsenic triselenide
Nagase, T
Naito, H
JOURNAL OF NON-CRYSTALLINE SOLIDS, 1998, 227 : 824 - 828
[5] Determination of free carrier recombination lifetime in amorphous semiconductors: Application to the study of iodine doping effect in arsenic triselenide
Nagase, Takashi
Naito, Hiroyoshi
Journal of Non-Crystalline Solids, 227-230 (Pt 2): : 824 - 828
[6] HOLE DRIFT MOBILITY IN AMORPHOUS SILICON
ALLAN, D
PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES, 1978, 38 (04): : 381 - 392
[7] ELECTRON AND HOLE DRIFT MOBILITY IN AMORPHOUS SILICON
MOORE, AR
APPLIED PHYSICS LETTERS, 1977, 31 (11) : 762 - 764
[8] FIELD DISACTIVATION OF HOLE DRIFT MOBILITY IN AMORPHOUS SELENIUM
JUSKA, G
ARLAUSKAS, K
VENGRIS, S
JOURNAL OF NON-CRYSTALLINE SOLIDS, 1987, 90 (1-3) : 437 - 439
[9] THE INTERPRETATION OF DRIFT MOBILITY EXPERIMENTS ON AMORPHOUS-SILICON
SPEAR, WE
STEEMERS, H
PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES, 1983, 47 (05): : L77 - L82
[10] The kinetics of photo-induced dichroism in thin films of amorphous arsenic triselenide
Robert E. Johanson
Matthew Kowalyshen
Daniel DeForrest
K. Shimakawa
S. O. Kasap
Journal of Materials Science: Materials in Electronics, 2007, 18 : 127 - 130

← 1 2 3 4 5 →