Inhomogeneity Complexes in Semiconductor Materials and Structures.

Disturbances in regular configuration of distribution of atoms in a fundamental semiconductor and of impurity atoms as well as pollutions are so strongly interdependent that one can take into consideration the existence of total inhomogeneity complexes. The external manifestation of inhomogeneity complexes consists of disturbances of distribution of electric fields which can be easily controlled, e. g. by measurement of the photovoltaic effect. It is argued that early disclosure of the manner in which the inhomogeneity complex is formed may be decisive to the yield in production of semiconductor devices, particularly integrated circuits of large scale integration.