Studies of the structural perfection of GaInAsSb quaternary layers grown by LPE on GaSb substrates

被引：0
|
作者：
Inst of Electron Technology, Warszawa, Poland [1 ]
机构：
来源：
Electron Technol (Warsaw) | / 2-3卷 / 257-260期
关键词：
D O I：
暂无
中图分类号：
学科分类号：
摘要：
引用
收藏
相关论文
共 50 条
  • [1] LPE growth and characterisation of GaInAsSb and GaAlAsSb quaternary layers on (100) GaSb substrates
    Piskorski, M
    Piotrowska, A
    Piotrowski, TT
    Golaszewska, K
    Papis, E
    Katcki, J
    Ratajczak, J
    Barcz, A
    Wawro, A
    THIN SOLID FILMS, 2004, 459 (1-2) : 2 - 6
  • [2] Technology and properties of GaInAsSb layers grown on GaSb substrates
    Piskorski, M.
    Papis, E.
    Golaszewska, K.
    Jung, W.
    Adamczewska, J.
    Perchuc, L.
    Electron Technology (Warsaw), 2000, 33 (03): : 393 - 399
  • [3] Growth and structural characterization of GaInAsSb films on GaSb substrates
    Amariei, A.
    Polychroniadis, E. K.
    Dimroth, F.
    Bett, A. W.
    JOURNAL OF CRYSTAL GROWTH, 2005, 275 (1-2) : E1229 - E1234
  • [4] Structural and optical characteristics of InGaP layers grown on GaAs substrates by LPE technique
    Prutskij, T
    Díaz-Arencibia, P
    Silva-Andrade, F
    Mintairov, A
    Kosel, T
    Merz, J
    JOURNAL OF NON-CRYSTALLINE SOLIDS, 2004, 338 : 269 - 272
  • [5] TEM study of compositional modulations in a GaInAsSb film grown on GaSb vicinal substrates
    Konidaris, S.
    Szczeszek, P.
    Polychroniadis, E. K.
    Dimroth, F.
    SIX INTERNATIONAL CONFERENCE OF THE BALKAN PHYSICAL UNION, 2007, 899 : 615 - 615
  • [6] PERFECTION OF HOMOEPITAXIAL LAYERS GROWN ON (001) INP SUBSTRATES
    MAHAJAN, S
    KERAMAIDAS, VG
    CHIN, AK
    BONNER, WA
    BALLMAN, AA
    APPLIED PHYSICS LETTERS, 1981, 38 (04) : 255 - 258
  • [7] Technology and properties of GaAlAsSb layers grown on GaSb substrates
    Piskorski, M
    Papis, E
    Piotrowski, TT
    Golaszewska, K
    Katcki, J
    Ratajczak, J
    Adamczewska, J
    Barcz, A
    Zielinski, M
    Piotrowska, A
    INTERNATIONAL CONFERENCE ON SOLID STATE CRYSTALS 2000: EPILAYERS AND HETEROSTRUCTURES IN OPTOELECTRONICS AND SEMICONDUCTOR TECHNOLOGY, 2001, 4413 : 76 - 81
  • [8] Structural and electrical properties of silicon epitaxial layers grown by LPE and CVD on identical polycrystalline substrates
    Wagner, G
    Wawra, H
    Dorsch, W
    Albrecht, M
    Krome, R
    Strunk, HP
    Riedel, S
    Moller, HJ
    Appel, W
    JOURNAL OF CRYSTAL GROWTH, 1997, 174 (1-4) : 680 - 685
  • [9] INFLUENCE OF THE SOLUTE CONVECTION ON INGASB LPE LAYERS ON VERTICALLY MOUNTED GASB SUBSTRATES
    HAYAKAWA, Y
    ASAKAWA, K
    TORIMOTO, Y
    YAMASHITA, K
    NAKAYAMA, A
    KUMAGAWA, M
    JOURNAL OF CRYSTAL GROWTH, 1993, 128 (1-4) : 159 - 162
  • [10] Structural and electrical properties of silicon epitaxial layers grown by LPE on highly resistive monocrystalline substrates
    Kopecek, R
    Peter, K
    Hötzel, J
    Bucher, E
    JOURNAL OF CRYSTAL GROWTH, 2000, 208 (1-4) : 289 - 296
12345