Structural properties of SI-GaAs grown in space

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作者：
Chen, N.F. [1 ]
Wang, Y.T. [1 ]
Zhong, X.R. [1 ]
Lin, L.Y. [1 ]
机构：
[1] Lab. of Semiconduct. Mat. Science, Institute of Semiconductors, Chinese Academy of Sciences, P. O. Box 912, Beijing 100083, China
来源：
Advances in Space Research | / 24卷 / 10期
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页码：1211 / 1214
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