EFFECTS OF HIP TREATMENT ON GAS PRESSURE SINTERED Si3N4.

被引：0

作者：

Ueno, Kazuo ^{[1
]}

Kinoshita, Makoto ^{[1
]}

Komiyama, Toru ^{[1
]}

机构：

[1] Government Industrial Research Inst, Osaka, Osaka, Jpn, Government Industrial Research Inst Osaka, Osaka, Jpn

来源：

Chemistry Express | 1986年 / 1卷 / 08期

关键词：

SILICON NITRIDE;

D O I：

暂无

中图分类号：

TQ17 [硅酸盐工业];

学科分类号：

0805 ; 080502 ;

摘要：

Gas pressure sintered Si//3N//4 was subjected to HIP treatment under the conditions of 1800 degree C and 200 MPa. By the treatment, pores having diameters less than 20 mu m were decreased considerably, but those having over 40 mu m diameters increased. Though the average strength was dropped for ca. 100 MPa, Weibull's modulus showed an improvement from 14 to 20.

引用

页码：511 / 514

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