Smoothing of Si trench sidewall surface by chemical dry etching and sacrificial oxidation

被引：0
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作者：
Yahata, A. [1 ]
Urano, S. [1 ]
Inoue, T. [1 ]
Shinohe, T. [1 ]
机构：
[1] Toshiba Corp, Kawasaki, Japan
来源：
Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes & Review Papers | 1998年 / 37卷 / 07期
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页码：3954 / 3955
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