Grasping SOI floating-body effects

被引：0
|
作者：
Krishnan, Srinath [1 ]
Fossum, Jerry G. [1 ]
机构：
[1] AMD, Sunnyvale, United States
来源：
IEEE Circuits and Devices Magazine | 1998年 / 14卷 / 04期
关键词：
D O I：
暂无
中图分类号：
学科分类号：
摘要：
引用
收藏
页码：32 / 37
相关论文
共 50 条
  • [31] Eliminating the floating-body effects in a novel CMOS-compatible thin-SOI LDMOS附视频
    蒋永恒
    罗小蓉
    李燕妃
    王沛
    范叶
    周坤
    王琦
    胡夏融
    张波
    Journal of Semiconductors, 2013, (09) : 57 - 61
  • [32] A physical model for gate-to-body tunneling current and its effects on floating-body PD/SOI CMOS devices and circuits
    Yang, JW
    Fossum, JG
    Workman, GO
    Huang, CL
    SOLID-STATE ELECTRONICS, 2004, 48 (02) : 259 - 270
  • [33] Effects on 0.13 μm floating-body partially depleted SOI n-MOSFETs in low temperature operation
    Martino, JA
    Pavanello, MA
    Simoen, E
    Claeys, C
    LOW TEMPERATURE ELECTRONICS AND LOW TEMPERATURE COFIRED CERAMIC BASED ELECTRONIC DEVICES, 2004, 2003 (27): : 3 - 15
  • [34] AC floating-body effects in submicron fully depleted (FD) SOI nMOSFET's and the impact on analog applications
    Tseng, YC
    Huang, WM
    Diaz, DC
    Ford, JM
    Woo, JCS
    IEEE ELECTRON DEVICE LETTERS, 1998, 19 (09) : 351 - 353
  • [35] Extra source implantation for suppression floating-body effect in partially depleted SOI MOSFETs
    Chen, Jing
    Luo, Jiexin
    Wu, Qingqing
    Chai, Zhan
    Huang, Xiaolu
    Wei, Xing
    Wang, Xi
    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 2012, 272 : 128 - 131
  • [36] A Tunnel Diode Body Contact Structure to Suppress the Floating-Body Effect in Partially Depleted SOI MOSFETs
    Chen, Jing
    Luo, Jiexin
    Wu, Qingqing
    Chai, Zhan
    Yu, Tao
    Dong, Yaojun
    Wang, Xi
    IEEE ELECTRON DEVICE LETTERS, 2011, 32 (10) : 1346 - 1348
  • [37] Analytical threshold voltage model for ultrathin SOI MOSFET's including short-channel and floating-body effects
    Adan, AO
    Higashi, K
    Fukushima, Y
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 1999, 46 (04) : 729 - 737
  • [38] Novel partially depleted SOI MOSFET for suppression floating-body effect: An embedded JFET structure
    Orouji, Ali A.
    Abbasi, Abdollah
    SUPERLATTICES AND MICROSTRUCTURES, 2012, 52 (03) : 552 - 559
  • [39] An accurate separation of floating-body and self-heating effects for high-frequency characterization of SOI MOSFET's
    Miura, N
    Chiba, T
    Baba, S
    SISPAD: 2005 International Conference on Simulation of Semiconductor Processes and Devices, 2005, : 63 - 66
  • [40] Effect of floating-body and stress bias on NBTI and HCI on 65-nm SOI pMOSFETs
    Mishra, Rahul
    Ioannou, Dimitris E.
    Mitra, Souvick
    Gauthier, Robert
    IEEE ELECTRON DEVICE LETTERS, 2008, 29 (03) : 262 - 264
12345