共 50 条
- [1] INFLUENCE OF UNIAXIAL COMPRESSION ON NONEQUILIBRIUM CARRIER LIFETIME IN SILICON SOVIET PHYSICS SEMICONDUCTORS-USSR, 1975, 8 (10): : 1326 - 1327
- [2] CHARGE CARRIER LIFETIME MEASUREMENTS ON HIGH PURITY SILICON. Nuclear instruments and methods in physics research, 1986, A253 (03): : 351 - 359
- [4] RELAXATION OF NONEQUILIBRIUM CONDUCTIVITY OF SILICON IN PRESENCE OF TRAPPING UNDER UNIAXIAL COMPRESSION SOVIET PHYSICS SEMICONDUCTORS-USSR, 1975, 9 (05): : 622 - 623
- [6] GENERATION LIFETIME IN HIGH RESISTIVITY SILICON. Nuclear instruments and methods in physics research, 1987, A260 (01): : 201 - 209
- [10] The influence of the character of laser source on the minority carrier lifetime in silicon lifetime measurement PROCEEDINGS OF ISES SOLAR WORLD CONGRESS 2007: SOLAR ENERGY AND HUMAN SETTLEMENT, VOLS I-V, 2007, : 1152 - 1155