Donor acceptor pair in molecular beam epitaxy grown GaN

被引：0
|
作者：
Ren, G.B. [1 ]
Dewsnip, D.J. [1 ]
Lacklison, D.E. [1 ]
Orton, J.W. [1 ]
Cheng, T.S. [1 ]
Foxon, C.T. [1 ]
机构：
[1] Chinese Acad of Sciences, Beijing, China
来源：
Materials science & engineering. B, Solid-state materials for advanced technology | 1997年 / B43卷 / 1-3期
关键词：
is funded by the LAQUANI;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
19
引用
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页码：242 / 245
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