Effects of strain on highly mismatched AlGaN/GaN multiple quantum wells

被引：0

作者：

Iizuka, Norio ^{[1
]}

Suzuki, Nobuo ^{[1
]}

机构：

[1] Corp. R. and D. Center, Toshiba Corporation, 1, Komukai Toshiba-cho, Saiwai-ku, Kawasaki 212-8582, Japan

来源：

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers | 2000年 / 39卷 / 5 B期

关键词：

Cracks - Electric fields - Energy gap - Morphology - Photoluminescence - Piezoelectricity - Semiconducting aluminum compounds - Semiconducting gallium compounds - Strain - Surfaces - Transmission electron microscopy;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

Photoluminescence (PL) spectra, surface morphologies and cross-sectional images of transmission microscopy (TEM) were examined after changing the thickness of barriers or wells in AlGaN/GaN multiple quantum wells. When the wells are thin and the barriers are thick, multi quantum wells (MQWs) are partially relaxed. This things about changes in the electric field and the band-gap of the wells. Thus, the PL spectrum becomes broad. Although few cracks were observed, cross-sectional TEM images indicated that the crystalline quality was poor. Even when the wells are thin, however, the strain energy can be lowered by reducing the barrier thickness. Thus, an improved PL spectrum can be obtained.

引用

页码：2376 / 2379

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