Advanced NAND-structure cell technology for reliable 3.3 V 64 Mb electrically erasable and programmable read only memories (EEPROMs)

被引：0

作者：

Aritome, Seiichi ^{[1
]}

Hatakeyama, Ikuo ^{[1
]}

Endoh, Tetsuo ^{[1
]}

Yamaguchi, Tetsuya ^{[1
]}

Shuto, Susumu ^{[1
]}

Iizuka, Hirohisa ^{[1
]}

Maruyama, Tooru ^{[1
]}

Watanabe, Hiroshi ^{[1
]}

Hemink, Gertjan ^{[1
]}

Sakui, Koji ^{[1
]}

Tanaka, Tomoharu ^{[1
]}

Momodomi, Masaki ^{[1
]}

Shirota, Riichiro ^{[1
]}

机构：

[1] TOSHIBA Corp, Kawasaki, Japan

来源：

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers | 1994年 / 33卷 / 1 B期

关键词：

PROM;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

引用

页码：524 / 528

共 4 条

[1] AN ADVANCED NAND-STRUCTURE CELL TECHNOLOGY FOR RELIABLE 3.3-V-64 MB ELECTRICALLY ERASABLE AND PROGRAMMABLE READ ONLY MEMORIES (EEPROMS)
ARITOME, S
HATAKEYAMA, I
ENDOH, T
YAMAGUCHI, T
SHUTO, S
IIZUKA, H
MARUYAMA, T
WATANABE, H
HEMINK, G
SAKUI, K
TANAKA, T
MOMODOMI, M
SHIROTA, R
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1994, 33 (1B): : 524 - 528
[2] Novel single-step rapid thermal oxynitridation technology for forming highly reliable electrically erasable programmable read-only memory tunnel oxide films
Fukuda, Hisashi
Yasuda, Makoto
Iwabuchi, Toshiyuki
Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, 1993, 32 (1 B): : 447 - 451
[3] NOVEL SINGLE-STEP RAPID THERMAL OXYNITRIDATION TECHNOLOGY FOR FORMING HIGHLY RELIABLE ELECTRICALLY ERASABLE PROGRAMMABLE READ-ONLY MEMORY TUNNEL OXIDE-FILMS
FUKUDA, H
YASUDA, M
IWABUCHI, T
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1993, 32 (1B): : 447 - 451
[4] Depletion-Type Cell-Transistor on Partial Silicon-on-Insulator Substrate for 2x nm Generation Floating-Gate NAND Electrically Erasable Programmable Read Only Memory
Mizukami, Makoto
Nishihara, Kiyohito
Ishida, Hirokazu
Aiso, Fumiki
Iguchi, Tadashi
Ichinose, Daigo
Fukumoto, Atsushi
Aoki, Nobutoshi
Kondo, Masaki
Izumida, Takashi
Tanimoto, Hiroyoshi
Enda, Toshiyuki
Watanabe, Hiroshi
Toriyama, Shuichi
Suzuki, Takashi
Mizushima, Ichiro
Arai, Fumitaka
JAPANESE JOURNAL OF APPLIED PHYSICS, 2010, 49 (04)

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