Significant initial stress under cyclic application of constant-current stress to thin SiO2 films

被引：0
|
作者：
Masuo, Akira [1 ]
Komiya, Kenji [1 ]
Omura, Yasuhisa [1 ]
机构：
[1] High-Technology Research Center
来源：
Technology Reports of Kansai University | 2002年 / 44卷
关键词：
Defects; -; Degradation; Silica; Stresses;
D O I：
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学科分类号：
摘要：
In this paper, hard breakdown of ultra-thin silicon dioxide films is analyzed statistically using Weibull plots. Tests, in which the films are subjected to periodic constant-current stress with unstressed intervals, show that the Weibull slope appears to be determined by degradation, which increases with time. This strongly suggests that degradation in thin silicon oxide films continues during the unstressed intervals, and that most latent defects are created by the initial stress.
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页码：35 / 41
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