IMPURITY-INDUCED ENHANCEMENT OF THE GROWTH RATE OF AMORPHIZED SILICON DURING SOLID-PHASE EPITAXY: A FREE-CARRIER EFFECT.

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作者：

Licoppe, C. ^{[1
]}

Nissim, Y.I. ^{[1
]}

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[1] CNET, Bagneux, Fr, CNET, Bagneux, Fr

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| 1600年 / 59期

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摘要：

SEMICONDUCTING SILICON

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[1] IMPURITY-INDUCED ENHANCEMENT OF THE GROWTH-RATE OF AMORPHIZED SILICON DURING SOLID-PHASE EPITAXY - A FREE-CARRIER EFFECT
LICOPPE, C
NISSIM, YI
JOURNAL OF APPLIED PHYSICS, 1986, 59 (02) : 432 - 438
[2] DIFFUSIVITY AND GROWTH-RATE OF SILICON IN SOLID-PHASE EPITAXY WITH AN ALUMINUM MEDIUM
QINGHENG, H
YANG, ES
IZMIRLIYAN, H
SOLID-STATE ELECTRONICS, 1982, 25 (12) : 1187 - 1188
[3] DOSE EFFECTS DURING SOLID-PHASE EPITAXIAL REGROWTH OF BORON-IMPLANTED, GERMANIUM-AMORPHIZED SILICON INDUCED BY RAPID THERMAL ANNEALING
ADEKOYA, WO
HAGEALI, M
MULLER, JC
SIFFERT, P
APPLIED PHYSICS LETTERS, 1988, 53 (06) : 511 - 513