Formation of InGaAs layers onto InP substrates by liquid-phase epitaxy

被引：0
|
作者：
Technical Univ of Moldova, Kishinau, Moldova [1 ]
机构：
来源：
Opt Commun | / 5-6卷 / 449-451期
关键词：
D O I：
暂无
中图分类号：
学科分类号：
摘要：
引用
收藏
相关论文
共 50 条
  • [1] Formation of InGaAs layers onto InP substrates by liquid-phase epitaxy
    Syrbu, NN
    Dorogan, VV
    Cretu, RV
    [J]. OPTICS COMMUNICATIONS, 1996, 132 (5-6) : 449 - 451
  • [2] ABRUPTNESS OF INGAAS/INP HETEROINTERFACE GROWN BY LIQUID-PHASE EPITAXY
    KUBO, M
    SASAI, Y
    YOSHIOKA, Y
    OGURA, M
    [J]. JOURNAL OF CRYSTAL GROWTH, 1987, 82 (04) : 584 - 588
  • [3] N+-INP GROWTH ON INGAAS BY LIQUID-PHASE EPITAXY
    GROVES, SH
    PLONKO, MC
    [J]. APPLIED PHYSICS LETTERS, 1981, 38 (12) : 1003 - 1004
  • [4] LIQUID-PHASE EPITAXY OF INP
    HESS, K
    STATH, N
    BENZ, KW
    [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1974, 121 (09) : 1208 - 1212
  • [5] Selective epitaxy of InP on Si(100) substrates prepared by liquid-phase epitaxy
    Sugai, Maki
    Kochiya, Toshio
    Oyama, Yutaka
    Nizhizawa, Jun-Ichi
    [J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 2008, 69 (2-3) : 411 - 414
  • [6] SELF SUPERSATURATION IN LIQUID-PHASE EPITAXY OF INGAAS ON INP - A SIMPLIFIED LPE TECHNIQUE
    BENCHIMOL, JL
    QUILLEC, M
    [J]. JOURNAL DE PHYSIQUE, 1982, 43 (NC-5): : 69 - 72
  • [7] DISLOCATION PROPAGATION AND ANNIHILATION IN INP HOMOEPITAXIAL LAYERS GROWN BY LIQUID-PHASE EPITAXY
    BEAM, EA
    MAHAJAN, S
    BONNER, WA
    [J]. MICROSCOPY OF SEMICONDUCTING MATERIALS 1989, 1989, 100 : 193 - 198
  • [8] DISLOCATION REPLICATION AND ANNIHILATION IN INP HOMOEPITAXIAL LAYERS GROWN BY LIQUID-PHASE EPITAXY
    BEAM, EA
    MAHAJAN, S
    BONNER, WA
    [J]. MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 1990, 7 (1-2): : 83 - 101
  • [9] DISLOCATION PROPAGATION AND ANNIHILATION IN INP HOMOEPITAXIAL LAYERS GROWN BY LIQUID-PHASE EPITAXY
    BEAM, EA
    MAHAJAN, S
    BONNER, WA
    [J]. INSTITUTE OF PHYSICS CONFERENCE SERIES, 1989, (100): : 193 - 198
  • [10] GAINASP-INP BURIED HETEROSTRUCTURE FORMATION BY LIQUID-PHASE EPITAXY
    LOGAN, RA
    TEMKIN, H
    MERRITT, FR
    MAHAJAN, S
    [J]. APPLIED PHYSICS LETTERS, 1984, 45 (12) : 1275 - 1277
12345