Atomic structure of {101 over-bar 0} inversion domain boundaries in GaN/sapphire layers

被引：0
|
作者：
机构：
来源：
J Appl Phys | / 5卷 / 2176期
关键词：
D O I：
暂无
中图分类号：
学科分类号：
摘要：
引用
收藏
相关论文
共 50 条
  • [1] The atomic structure of {10(1)over-bar-0} inversion domain boundaries in GaN/sapphire layers
    Potin, V
    Ruterana, P
    Nouet, G
    JOURNAL OF APPLIED PHYSICS, 1997, 82 (05) : 2176 - 2183
  • [2] Evidence for multiple atomic structure for the {10(1)over-bar-0} inversion domain boundaries in GaN layers
    Potin, V
    Nouet, G
    Ruterana, P
    APPLIED PHYSICS LETTERS, 1999, 74 (07) : 947 - 949
  • [3] The atomic structure of the (10(1)over-bar-0) inversion domains in GaN/sapphire layers
    Potin, V
    Ruterana, P
    Nouet, G
    Salvador, A
    Morkoc, H
    GALLIUM NITRIDE AND RELATED MATERIALS II, 1997, 468 : 323 - 328
  • [4] The {10(1)over-bar0} inversion domains in GaN/sapphire layers: an electron microscopy analysis of the atomic structure of the boundaries
    Potin, V
    Nouet, G
    Ruterana, P
    PHILOSOPHICAL MAGAZINE A-PHYSICS OF CONDENSED MATTER STRUCTURE DEFECTS AND MECHANICAL PROPERTIES, 1999, 79 (12): : 2899 - 2919
  • [5] The atomic structure of tilt grain boundaries in AlN/GaN layers grown on (0001) sapphire:: A case study, the Σ31 (11(4)over-bar(7)over-bar-0) symmetric grain boundary
    Potin, V
    Béré, A
    Ruterana, P
    Nouet, G
    INTERGRANULAR AND INTERPHASE BOUNDARIES IN MATERIALS, IIB98, 1999, 294-2 : 243 - 246
  • [6] Inversion domain boundaries in GaN grown on sapphire
    Romano, LT
    Northrup, JE
    III-V NITRIDES, 1997, 449 : 423 - 428
  • [7] Orientation control of GaN {1 1 (2)over-bar 2} and {1 0 (1)over-bar (3)over-bar} grown on (1 0 (1)over-bar 0) sapphire by metal-organic vapor phase epitaxy
    Ploch, Simon
    Frentrup, Martin
    Wernicke, Tim
    Pristovsek, Markus
    Weyers, Markus
    Kneissl, Michael
    JOURNAL OF CRYSTAL GROWTH, 2010, 312 (15) : 2171 - 2174
  • [8] TEM study of {10(1)over-bar0} inversion domains in GaN layers grown on {0001} sapphire substrate
    Potin, V
    Ruterana, P
    Nouet, G
    MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 1999, 59 (1-3): : 173 - 176
  • [9] Investigation of the atomic structure of [0001] tilt grain boundaries in GaN/sapphire epitaxial layers
    Potin, V
    Nouet, G
    Ruterana, P
    Pond, RC
    MICROSCOPY OF SEMICONDUCTING MATERIALS 1999, PROCEEDINGS, 1999, (164): : 377 - 380
  • [10] Determination of the atomic structure of inversion domain boundaries in α-GaN by transmission electron microscopy
    Cherns, D
    Young, WT
    Saunders, M
    Steeds, JW
    Ponce, FA
    Nakamura, S
    PHILOSOPHICAL MAGAZINE A-PHYSICS OF CONDENSED MATTER STRUCTURE DEFECTS AND MECHANICAL PROPERTIES, 1998, 77 (01): : 273 - 286
12345