EXPERIMENTAL INVESTIGATION OF A MILLIMETER BAND FREQUENCY CONVERTER ON n-InSb at 4. 2 degree K.

被引：0
|
作者：
Voronenko, V.P.
Vystavkin, A.N.
Zyabrev, B.G.
Navrotskiy, V.I.
机构：
来源：
Radio Engineering and Electronic Physics (English translation of Radiotekhnika i Elektronika) | 1972年 / 17卷 / 08期
关键词：
SEMICONDUCTOR DEVICES;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
Experimental results are cited from an investigation of the volumetric nonlinear inertial elements of n-InSb as a frequency converter in the wave bands of 4 and 2 mm. Recommendations are given on selecting a material for such a converter type and optimal operating modes. Losses in conversion of about 7 dB are reached at a wavelength of 4 mm and 8 dB at a wavelength of 2 mm.
引用
收藏
页码：1287 / 1992
相关论文
共 27 条
  • [1] EXPERIMENTAL STUDY OF MILLIMETER-BAND FREQUENCY CONVERTERS ON N-INSB AT 4,2 DEGREES K
    VORONENKO, VP
    VYSTAVKI.AN
    ZYABREV, BG
    NAVROTSK.VI
    RADIOTEKHNIKA I ELEKTRONIKA, 1972, 17 (08): : 1632 - +
  • [2] EXPERIMENTAL STUDY OF 4 MILLIMETER BAND MIXER ON N-INSB AT 77 DEGREES K
    LEONOV, AM
    TRIFONOV, BA
    RADIOTEKHNIKA I ELEKTRONIKA, 1974, 19 (01): : 228 - 230
  • [3] MICROWAVE FARADAY EFFECT IN n-TYPE InSb AT 4. 5 degree K.
    Potapov, V.T.
    Trifonov, V.I.
    Yaremenko, N.G.
    1972, 5 (08): : 1442 - 1443
  • [4] NONLINEAR EFFECTS IN N-INSB AT 77 DEGREES K IN SHORT-WAVE PART OF MILLIMETER BAND
    BELYANTSEV, AM
    GENKIN, VN
    LEONOV, AM
    TRIFONOV, BA
    JETP LETTERS, 1973, 18 (10) : 362 - 364
  • [5] VELOCITY OF SOUND IN POLYAMIDES NEAR 4. 2 degree K.
    Golub', P.D.
    Perepechko, I.I.
    1974, 20 (01): : 22 - 25
  • [6] EFFECT OF A MAGNETIC FIELD ON CREEP OF NICKEL AT 4. 2 degree K.
    Aksenov, V.K.
    Gindin, I.A.
    Druinskii, E.I.
    Karaseva, E.V.
    Starodubov, Ya.D.
    Soviet Journal of Low Temperature Physics (English Translation of Fizika Nizkikh Temperatur), 1977, 3 (07): : 448 - 453
  • [7] FLUORESCENCE SPECTRA OF COUMARIN DERIVATIVE SOLUTIONS AT 4. 2 degree K.
    Koyava, V.T.
    Sakovich, V.V.
    1600, (43):
  • [8] ACTIVATED CONDUCTION AND HALL EFFECT IN n-TYPE InSb AT T equals 30-4. 2 degree K.
    Korotin, V.G.
    Krivonogov, S.N.
    Nasledov, D.N.
    Smetannikova, Yu.S.
    Soviet Physics, Semiconductors (English translation of Fizika i Tekhnika Poluprovodnikov), 1974, 8 (02): : 259 - 260
  • [9] CHARACTERISTICS OF THE PHOTOCONDUCTIVITY OF RHODIUM-DOPED SILICON AT 4. 2 degree K.
    Mamadalimov, A.T.
    Khabibullaev, P.K.
    Usmanov, T.A.
    Soviet physics. Semiconductors, 1981, 15 (07): : 737 - 739
  • [10] RECOMBINATION PROCESSES IN N-TYPE INSB IN TEMPERATURE-RANGE 4. 2-77 DEGREE K
    GUSEINOV, EK
    IBRAGIMO.RI
    KOROTIN, VG
    NASLEDOV, DN
    POPOV, YG
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1972, 5 (09): : 1549 - +
123