Monolithic coplanar, varactor tunable V-band HEMT oscillator with injection locking capability

被引：0
|
作者：
Lab for Electromagnetic Fields and, Microwave Electronics, Zurich, Switzerland [1 ]
机构：
来源：
Electron Lett | / 20卷 / 1899-1900期
关键词：
High electron mobility transistors - Microwave generation - Millimeter waves - Schematic diagrams - Spectrum analysis - Varactors;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
The authors present a V-band coplanar, varactor tunable HEMT oscillator, which can be injection locked. The phase noise of the locked oscillator is -75 dBc/Hz at 100 kHz offset. The oscillator has a large tuning range of 6 GHz (centre frequency 59 GHz) and an output power of 5.2 dBm.
引用
收藏
相关论文
共 50 条
  • [1] Monolithic coplanar, varactor tunable V-band HEMT oscillator with injection locking capability
    Schefer, M
    Lott, U
    Benedickter, H
    Klepser, BU
    Patrick, W
    Bachtold, W
    ELECTRONICS LETTERS, 1996, 32 (20) : 1899 - 1900
  • [2] Passive, coplanar V-band HEMT mixer
    Schefer, M
    Lott, U
    Patrick, W
    Meier, H
    Bachtold, W
    1997 INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE AND RELATED MATERIALS - CONFERENCE PROCEEDINGS, 1997, : 177 - 180
  • [3] V-BAND MONOLITHIC 2 STAGE HEMT AMPLIFIERS
    AUST, M
    YONAKI, J
    NAKANO, K
    BERENZ, J
    DOW, G
    LIU, LCT
    1989 IEEE MILITARY COMMUNICATIONS CONFERENCE, VOLS 1-3: BRIDGING THE GAP : INTEROPERABILITY, SURVIVABILITY, SECURITY, 1989, : 739 - 743
  • [4] V-band injection-locked oscillator with 9 GHz locking range
    Feng, C.
    Yu, X. P.
    Lu, Z. H.
    Lim, W. M.
    Sui, W. Q.
    ELECTRONICS LETTERS, 2013, 49 (08) : 548 - 549
  • [5] A FAMILY OF INGAAS/ALGAAS V-BAND MONOLITHIC HEMT LNAS
    AUST, M
    YONAKI, J
    NAKANO, K
    BERENZ, J
    DOW, GS
    LIU, LCT
    GAAS IC SYMPOSIUM /: TECHNICAL DIGEST 1989, 1989, : 95 - 98
  • [6] TUNABLE HIGH-POWER V-BAND GUNN OSCILLATOR
    SUN, C
    BENKO, E
    TULLY, JW
    IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 1979, 27 (05) : 512 - 514
  • [7] A V-band monolithic HEMT amplifier using two types of RF grounds
    Ono, N
    IEICE TRANSACTIONS ON ELECTRONICS, 2004, E87C (06) : 1010 - 1012
  • [8] A HIGH-EFFICIENCY V-BAND MONOLITHIC HEMT POWER-AMPLIFIER
    KASODY, RE
    DOW, GS
    SHARMA, AK
    AUST, MV
    YAMAUCHI, D
    LAI, R
    BIEDENBENDER, M
    TAN, KL
    ALLEN, BR
    IEEE MICROWAVE AND GUIDED WAVE LETTERS, 1994, 4 (09): : 303 - 304
  • [9] A V-BAND HIGH-EFFICIENCY PSEUDOMORPHIC HEMT MONOLITHIC POWER-AMPLIFIER
    SHARMA, AK
    ONAK, GP
    LAI, R
    TAN, KL
    IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 1994, 42 (12) : 2603 - 2609
  • [10] Design of passive coplanar filters in V-band
    Kulke, R
    Wolff, I
    1996 IEEE MTT-S INTERNATIONAL MICROWAVE SYMPOSIUM DIGEST, VOLS 1-3, 1996, : 1647 - 1650
12345