Axiotaxy of CoSi2 thin films on Si(100) substrates and the effects of Ti alloying

被引：0
|
作者：
Özean, Ahmet S. [1 ]
Ludwig Jr., Karl F. [1 ]
Detavernier, Christophe [2 ,3 ]
Lavoie, Christian [2 ]
Jordan-Sweet, Jean L. [2 ]
机构：
[1] Boston University, Department of Physics, Boston, MA 02215
[2] IBM T.J. Watson Research Center, Yorktown Heights, NY 10598
[3] Department of Solid State Physics, Ghent University, Gent, Belgium
来源：
Journal of Applied Physics | 2004年 / 95卷 / 12期
关键词：
Alloying - Anisotropy - CMOS integrated circuits - Electron microscopy - Epitaxial growth - Field effect transistors - Grain boundaries - Interfacial energy - Lattice constants - Nucleation - Silicon - Thin films - Titanium - X ray diffraction;
D O I：
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摘要：
The occurrence of axiotaxy in CoSi2 thin films on Si(100) substrates and the effects of Ti alloying were discussed. The influence of Ti alloying was investigated by using in situ x-ray diffraction measurements, as well as pole figure analysis. It was found that the nucleation of both the CoSi and CoSi2 phases is delayed to higher temperatures for the 5 at.% Ti alloyed films. It was also found that the texture of the CoSi2 phase is also influenced by the addition of Ti.
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页码：8376 / 8381
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