Etching process of silicon dioxide with nonequilibrium atmospheric pressure plasma

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作者：
Yamakawa, Koji [1 ]
Hori, Masaru [2 ]
Goto, Toshio [1 ]
Den, Shoji [3 ]
Katagiri, Toshirou [3 ]
Kano, Hiroyuki [4 ]
机构：
[1] Department of Quantum Engineering, Nagoya University, Furo-Cho, Chikusa-ku, Nagoya 464-8603, Japan
[2] Department of Electrical Engineering and Computer Science, Nagoya University, Furo-Cho, Chikusa-ku, Nagoya 464-8603, Japan
[3] Department of Engineering, Katagiri Engineering Co., Ltd., Saiwai-ku, Kawasaki 661-8661, Japan
[4] NU-EcoEngineering Co., Ltd., Umazutsumi, Miyoshi-cho, Nishikamo-gun, Aichi 470-0201, Japan
来源：
Journal of Applied Physics | 2005年 / 98卷 / 01期
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