Multi-sheets In0.25Ga0.75As quantum dots grown by migration-enhanced epitaxy

被引：0
|
作者：
Chinese Acad of Sciences, Beijing, China [1 ]
机构：
来源：
J Cryst Growth | / 4卷 / 705-707期
关键词：
D O I：
暂无
中图分类号：
学科分类号：
摘要：
4
引用
收藏
相关论文
共 50 条
  • [1] Multi-sheets In0.25Ga0.75As quantum dots grown by migration-enhanced epitaxy
    Cheng, WQ
    Zhong, ZY
    Wu, Y
    Huang, Q
    Zhou, JM
    JOURNAL OF CRYSTAL GROWTH, 1998, 183 (04) : 705 - 707
  • [2] The self-organized In0.25Ga0.75As quantum dots grown by migration enhanced epitaxy
    Cheng, WQ
    Zhong, ZY
    Wu, Y
    Huang, Q
    Zhou, JM
    JOURNAL OF CRYSTAL GROWTH, 1998, 183 (03) : 279 - 283
  • [3] Self-organized In0.25Ga0.75As quantum dots grown by migration enhanced epitaxy
    Chinese Acad of Sciences, Beijing, China
    J Cryst Growth, 3 (279-283):
  • [4] Growth of In0.25Ga0.75As quantum dots on GaP utilizing a GaAs interlayer
    Stracke, G.
    Glacki, A.
    Nowozin, T.
    Bonato, L.
    Rodt, S.
    Prohl, C.
    Lenz, A.
    Eisele, H.
    Schliwa, A.
    Strittmatter, A.
    Pohl, U. W.
    Bimberg, D.
    APPLIED PHYSICS LETTERS, 2012, 101 (22)
  • [5] Single and double δ-doped Al0.25Ga0.75As/In0.25Ga0.75As pseudomorphic heterostructures grown by molecular-beam epitaxy
    Kudo, Makoto, 1600, Publ by JJAP, Minato-ku, Japan (33):
  • [6] Investigation of barrier tunneling characteristics of symmetrical double quantum well in In0.25Ga0.75As/GaAs/In0.25Ga0.75As heterostructure
    L. K. Orlov
    N. L. Ivina
    Yu. A. Romanov
    R. A. Rubtsova
    Physics of the Solid State, 2000, 42 : 548 - 553
  • [7] Investigation of barrier tunneling characteristics of symmetrical double quantum well in In0.25Ga0.75As/GaAs/In0.25Ga0.75As heterostructure
    Orlov, LK
    Ivina, NL
    Romanov, YA
    Rubtsova, RA
    PHYSICS OF THE SOLID STATE, 2000, 42 (03) : 548 - 553
  • [8] Spatial structure of In0.25Ga0.75As/GaAs/GaP quantum dots on the atomic scale
    Prohl, Christopher
    Lenz, Andrea
    Roy, Dominik
    Schuppang, Josephine
    Stracke, Gernot
    Strittmatter, Andre
    Pohl, Udo W.
    Bimberg, Dieter
    Eisele, Holger
    Daehne, Mario
    APPLIED PHYSICS LETTERS, 2013, 102 (12)
  • [9] Spontaneous lateral alignment of In0.25Ga0.75As self-assembled quantum dots on (311)B GaAs grown by gas source molecular beam epitaxy
    Nishi, K
    Anan, T
    Gomyo, A
    Kohmoto, S
    Sugou, S
    APPLIED PHYSICS LETTERS, 1997, 70 (26) : 3579 - 3581
  • [10] SINGLE AND DOUBLE DELTA-DOPED AL0.25GA0.75AS/IN0.25GA0.75AS PSEUDOMORPHIC HETEROSTRUCTURES GROWN BY MOLECULAR-BEAM EPITAXY
    KUDO, M
    MISHIMA, T
    TANIMOTO, T
    WASHIMA, M
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1994, 33 (02): : 971 - 975
12345