Photoluminescence and electroluminescence study of Si-Si0.7Ge0.3 quantum dots

被引：0
|
作者：
Univ of Glasgow, Glasgow, United Kingdom [1 ]
机构：
来源：
Applied Surface Science | 1996年 / 102卷
关键词：
D O I：
暂无
中图分类号：
学科分类号：
摘要：
23
引用
收藏
页码：372 / 376
相关论文
共 50 条
  • [1] Photoluminescence and electroluminescence study of Si-Si0.7Ge0.3 quantum dots
    Tang, YS
    Ni, WX
    Torres, CMS
    Hansson, GV
    APPLIED SURFACE SCIENCE, 1996, 102 : 372 - 376
  • [2] FABRICATION AND CHARACTERIZATION OF SI-SI0.7GE0.3 QUANTUM-DOT LIGHT-EMITTING-DIODES
    TANG, YS
    NI, WX
    TORRES, S
    HANSSON, GV
    ELECTRONICS LETTERS, 1995, 31 (16) : 1385 - 1386
  • [3] Photoluminescence study of Si/Ge quantum dots
    Larsson, M
    Elfving, A
    Holtz, PO
    Hansson, GV
    Ni, WA
    SURFACE SCIENCE, 2003, 532 : 832 - 836
  • [4] Systematic studies of the photoluminescence of Ge quantum dots grown on strained Si0.7Ge0.3 buffer layer
    Yang, Hongbin
    Tao, Zhensheng
    Lin, Jianhui
    Lu, Fang
    Jiang, Zuimin
    Zhong, Zhenyang
    APPLIED PHYSICS LETTERS, 2008, 92 (11)
  • [5] AC conductance in dense array of the Ge0.7Si0.3 quantum dots in Si
    Drichko, I. L.
    Diakonov, A. M.
    Smirnov, I. Yu.
    Suslov, A. V.
    Galperin, Y. M.
    Yakimov, A. I.
    Nikiforov, A. I.
    LOW TEMPERATURE PHYSICS, PTS A AND B, 2006, 850 : 1530 - +
  • [6] Photoluminescence Study of Si Quantum Dots with Ge Core
    Makihara, Katsunori
    Kondo, Keigo
    Ikeda, Mitsuhisa
    Ohta, Akio
    Miyazaki, Seiichi
    SIGE, GE, AND RELATED COMPOUNDS 6: MATERIALS, PROCESSING, AND DEVICES, 2014, 64 (06): : 365 - 370
  • [7] The studies of Ge quantum dots on strained Si0.7Ge0.3 layer by photoluminescence and deep level transient spectroscopy
    Tao, Zhensheng
    Zhan, Ning
    Yang, Hongbin
    Ling, Yan
    Zhong, Zhenyang
    Lu, Fang
    APPLIED SURFACE SCIENCE, 2009, 255 (06) : 3548 - 3551
  • [8] On the theory of barrier-delta-doped quantum well Ge0.3Si0.7/Si/Ge0.3Si0.7 grown on Ge0.3Si0.7(001)
    Xu, ZZ
    JOURNAL OF APPLIED PHYSICS, 1996, 79 (07) : 3630 - 3634
  • [9] Photoluminescence Study of Energy Levels in Ge Quantum Dots in Si
    Shklyaev, Alexander A.
    Gorbunov, Andrei V.
    Ichikawa, Masakazu
    2009 INTERNATIONAL SCHOOL AND SEMINAR ON MODERN PROBLEMS OF NANOELECTRONICS, MICRO- AND NANOSYSTEM TECHNOLOGIES, 2009, : 24 - +
  • [10] Photoluminescence study of high density Si quantum dots with Ge core
    Kondo, K.
    Makihara, K.
    Ikeda, M.
    Miyazaki, S.
    JOURNAL OF APPLIED PHYSICS, 2016, 119 (03)
12345