SWITCHING WAVEFORMS OF THE L2FET: A 5-V GATE-DRIVE POWER MOSFET.

被引：0

作者：

Wheatley Jr., C.Frank ^{[1
]}

Ronan Jr., Harold R. ^{[1
]}

机构：

[1] GE/RCA, Mountaintop, PA, USA, GE/RCA, Mountaintop, PA, USA

来源：

IEEE Transactions on Power Electronics | 1987年 / PE-2卷 / 02期

关键词：

LOGIC DEVICES - Gates - TRANSISTORS; FIELD EFFECT - Junctions;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

The switching waveforms of a newly announced series of power MOSFET devices called logic-level FETs (L**2FETs) and featuring a 5-V gate drive are presented and contrasted with those of the more conventional 10-V gate-drive devices. A novel method of characterizing MOSFET switching performance is discussed in which the MOSFET is treated as a vertical JFET driven in cascode from a low-voltage lateral MOS. The two-to-one advantage in rise and fall time and the four-to-one reduction in switching dynamic V//(//s//a//t//) dissipation with constant drive power of the L**2FET over the 10-V MOSFET are demonstrated and discussed.

引用

页码：81 / 89