Growth behavior of GaAs in metalorganic vapor phase epitaxy onto ZnSe

被引：0
|
作者：
Funato, Mitsuru [1 ]
Fujita, Shizuo [1 ]
Fujita, Shigeo [1 ]
机构：
[1] Kyoto Univ, Kyoto, Japan
来源：
Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes & Review Papers | 1994年 / 33卷 / 9 A期
关键词：
Epitaxial growth - Semiconducting gallium arsenide - Semiconducting zinc compounds - Semiconductor quantum wells - Thermal effects - Transmission electron microscopy - Vapor deposition;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
Growth modes in metalorganic vapor phase epitaxy (MOVPE) of GaAs on ZnSe under various growth conditions are investigated and compared. It is found from transmission electron microscopy (TEM) observation that GaAs growth at 550 °C and low V/III ratios (&le5) is highly 3-dimensional, whereas the growth at low temperatures (&le500 °C) or high V/III ratios (&le10) is 2-dimensional. Migration of Ga-related clusters seems to be responsible for the 3-dimensional growth. Using this variation of the growth modes, a quantum well structure is fabricated and the possibility to fabricate a quantum dot is also indicated.
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页码：4851 / 4854
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