PHOTOLUMINESCENCE OF GALLIUM ARSENIDE DOPED BY SILICON IMPLANTATION.

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作者：
Voltsit, V.V.
Drazhan, A.V.
Zuev, V.A.
Ivaniichuk, M.T.
Korbutyak, D.V.
Litovchenko, V.G.
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| 1978年 / 12卷 / 10期
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PHOTOLUMINESCENCE;
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摘要：
Luminescence centers were formed by the bombardment of GaAs with high-energy (45 and 85 keV) silicon ions in doses of 10**1**3-10**1**4 cm** minus **2. After implantation, samples of semiinsulating gallium arsenide were coated with an SiO//2 or Si//3N//4 film and annealed in an H//2 atmosphere. The luminescence spectra were analyzed in the 1. 3-1. 52 eV range at temperatures 4. 2-70 degree K. (AIP)
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页码：1211 / 1213
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