IMPURITY BANDS IN SILICON AND GERMANIUM.

被引：0

作者：

Mott, Nevill ^{[1
]}

机构：

[1] Cavendish Lab, Cambridge, Engl, Cavendish Lab, Cambridge, Engl

来源：

| 1987年

关键词：

D O I：

10.1007/978-1-4613-1841-5_2

中图分类号：

学科分类号：

摘要：

引用

共 50 条

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Kervalishvili, P.D.
Neorganiceskie materialy, 1979, 15 (12): : 2101 - 2104
[2] SPIN ORDERING OF HOLES IN AN IMPURITY BAND IN GERMANIUM.
Lomasov, Yu.N.
Rud', N.A.
Soviet Physics, Solid State (English translation of Fizika Tverdogo Tela), 1980, 22 (12): : 2117 - 2119
[3] Functionalization and applications of nanostructured silicon and germanium.
Buriak, JM
Stewart, MP
Choi, HC
Choi, K
ABSTRACTS OF PAPERS OF THE AMERICAN CHEMICAL SOCIETY, 2000, 220 : U427 - U427
[4] HEAVY ION DAMAGE IN SILICON AND GERMANIUM.
Howe, L.M.
Rainville, M.H.
Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms, 1986, B19-20 : 61 - 66
[5] STRUCTURAL CHARACTERIZATION OF AMORPHOUS SILICON AND GERMANIUM.
Tsu, Raphael
1987,
[6] PIEZORESISTANCE IN n-TYPE SILICON AND GERMANIUM.
Sugiyama, Masakazu
National Technical Report (Matsushita Electric Industry Company), 1976, 22 (03): : 235 - 244
[7] IMPURITY PHOTOCONDUCTIVITY OF EXACTLY COMPENSATED n-TYPE GERMANIUM.
Kuz'min, G.A.
Soviet Physics, Semiconductors (English translation of Fizika i Tekhnika Poluprovodnikov), 1977, 11 (05): : 532 - 534
[8] LOCATION OF 125I IMPLANTED IN SILICON AND GERMANIUM.
Dezsi, I.
Coussement, R.
Langouche, G.
Van Rossum, M.
1600, (76):
[9] INTERACTION BETWEEN SIMPLE LATTICE DEFECTS AND DONOR IMPURITY ATOMS IN GERMANIUM.
Tkachev, V.D.
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1972, 5 (08): : 1324 - 1329
[10] On the spectrum of germanium.
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