CAPTURE OF ELECTRONS ON A CLEAN SURFACE OF GERMANIUM.

被引：0
|
作者：
Vul, B.M.
Zavaritskaya, E.I.
Ivanchik, I.I.
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来源：
Soviet physics. Semiconductors | 1981年 / 15卷 / 09期
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TM2 [电工材料]; TN [电子技术、通信技术];
学科分类号：
0805 ; 080502 ; 080801 ; 0809 ;
摘要：
Valence electrons are transferred from the bulk of germanium to a clean surface releasing an energy E//s and leaving holes in a thin surface layer. The experimental value of the free hole density of p//s approximately equals 7 10**1**2 cm** minus **2 is used in a Thomas-Fermi approximation to demonstrate by calculation that the effective thickness of the hole layer is about 30 A, and the binding energy of electrons on the surface is E//s approximately equals 0. 12 ev.
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页码：1041 / 1044
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